Abstract
A novel redundant mechanism is proposed for embedded memories in this paper. Redundant rows and columns are added into the memory array as in the conventional approaches. However, the redundant rows and columns are divided into row blocks and column blocks, respectively. The reconfiguration is performed at the row (column) block level instead of the conventional row (column) level. Based on the proposed redundant mechanism, we first show that the complexity of the redundancy allocation problem is NP-complete. Thereafter, an extended local repair-most (ELRM) algorithm suitable for built-in implementation is proposed. The complexity of the ELRM algorithm is O(N), where N denotes the number of memory cells. According to the simulation results, the hardware overhead for implementing this algorithm is below 0.17% for a 1024/spl times/2048-b SRAM. Due to the efficient usage of the redundant elements, the manufacturing yield, repair rate, and reliability can be improved significantly.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
