Efficient all lead-free perovskite solar cell simulation of FASnI3/FAGeCl3 with 30% efficiency: SCAPS-1D investigation

Abstract

Hybrid organic–inorganic perovskite solar cells (PSCs) currently receives extensive amounts of focus as one of e main study areas in photovoltaic technology, despite its significant progress and high efficiency; the PSCs face numerous issues, such as stability over time and toxic effects of lead. Recently, to address the problem of toxicity, FASnI3 is commonly used to be an absorber in perovskite solar device due to its promising performance. During this article, we formed and modeled a lead-free n-i-p perovskite solar device made of FASnI3 on i-layer and FAGeCl3 for a p-layer, FASnI3 in the n-layer using the simulator SCAPS-1D. To gain better understanding of this solar cell, various parameters impacting the device performance including thickness and doping level of i-layer, n-layer and p-layer thickness, the total i-layer density of defect and the impact of the temperature on the efficiency of device, are investigated and discussed. This new study is interesting since we added a thin layer of FASnI3 that was strongly n-doped to achieve great performance. The importance and effect of n+-FASnI3 on the device performance were showed and discussed. The efficiency of the device has been demonstrated to be affected by both the thickness and doping level of the extra layer n+-FASnI3. The Voc of the concerned device was increased to 1.1 V after adding n+-FASnI3 layer, the current density Jsc increased to 31.42 mA/cm2, the Fill Factor up to 87.33%, after including n+-FASnI3 into the PSC, a high efficiency of 30.19% can be obtained. These simulation results will allow it achievable to develop and manufacture, high-efficiency, with no-lead PSCs.