Abstract
A 1.2 mm thick microchip cleaved from a 1.2 at.% Nd3+: BaGd2(MoO4)4 crystal was used as the laser gain medium directly. The laser cavity mirrors were coated on the microchip without cutting and polishing. In the 1.06 μm quasi-CW laser operation, the microchip was pumped by a Ti:sapphire laser with a duty cycle of 10%, the threshold is 10 mW, and the slope efficiency is 50%. In the CW laser operation pumped by a diode laser, the threshold and slope efficiency are 140 mW and 33%, respectively. The results demonstrate that the unprocessed surfaces of the cleaved microchip have good enough flatness and parallelism for laser operation.
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