Abstract

High-quality crystals of KLu(WO<sub>4</sub>)<sub>2</sub>, shortly KLuW, were grown with sizes sufficient for characterization of the thermomechanical and optical properties, and substantial progress was achieved in the field of spectroscopy and laser operation with Yb<sup>3+</sup>- and Tm<sup>3+</sup>-doping. We review the properties of flux grown KLuW, the Yb<sup>3+</sup> and Tm<sup>3+</sup> spectroscopy, and present laser results obtained in several operational regimes both with Ti:sapphire and direct diode laser pumping using InGaAs and AlGaAs diodes near 980 and 800 nm, respectively. The slope efficiencies with respect to the absorbed pump power achieved with continuous-wave (CW) bulk and epitaxial Yb:KLuW lasers under Ti:sapphire laser pumping were &ap;57 and &ap;66%, respectively. Output powers as high as 3.28 W were obtained with diode pumping in a simple two-mirror cavity where the slope efficiency with respect to the incident pump power reached &ap;78%. Passively Q-switched laser operation of bulk Yb:KLuW was realized with a Cr:YAG saturable absorber resulting in oscillation at &ap;1031 nm with a repetition rate of 28 kHz and simultaneous Raman conversion to &ap;1138 nm with maximum energies of 32.4 and 14.4 &mgr;J, respectively. The corresponding pulse durations were 1.41 and 0.71 ns. Passive mode-locking by a semiconductor saturable absorber mirror (SESAM) resulted in bandwidth-limited pulses with duration of 81 fs (1046 nm, 95 MHz) and 114 fs (1030 nm, 101 MHz) for bulk and epitaxial Yb:KLuW lasers, respectively. Slope efficiency as high as 69% with respect to the absorbed power and an output power of 4 W at 1950 nm were achieved with a diode-pumped Tm:KLuW laser. The tunability of this laser, under Ti:sapphire laser pumping, extended from 1800 to 1987 nm. An epitaxial Tm:KLuW laser provided slope efficiency as high as 64% and a tuning range from 1894 to 2039 nm when pumped by a Ti:sapphire laser.

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