Abstract
This article presents a novel efficiency-enhanced Doherty power amplifier (DPA) by using a Chireix-like compensation technique. This technique introduces a compensation circuit structure at the combiner to offset the phase difference effect of a DPA for enhancing drain efficiency. A DPA based on the proposed structure is fabricated with two 10 W GaN high electron mobility transistor (HEMT) transistors. The fabricated DPA with such proposed compensation structure manifests a measured saturated output power of 43.5 dBm and drain efficiency of 68% to 71% in the frequency range of 3.2 to 3.7 GHz. Forty-five percent of drain efficiency can be achieved at 6 dB power back-off. And the adjacent channel leakage ratio (ACLR) is better than −48.6 dBc with digital predistortion.
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