Abstract
The RF power of the High Aspect Ratio (HAR) patterning equipment used for 3D NAND memory etching processes rapidly increased recently. However, despite implementing higher ion energy, its effect on increasing the etch rate is not satisfactory. This letter studies the energy transfer efficiency between bombarding fluorocarbon (FC) molecules and the SiO2 substrate, and discusses the limitation of securing the etch rate by high-energy FC molecules.
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