Abstract
Inorganic materials, such as MoOx and V2Ox, are increasingly explored as hole transport layers for perovskite based solar cells. Due to their large work function and n-type nature, hole collection mechanisms with such materials are fundamentally different, and the associated device optimizations are not well elucidated. In addition, prospects of such architectures against the challenges posed by ion migration are yet to be explored—which we critically examine in this contribution through detailed numerical simulations. We find that, for similar ion densities and interface recombination velocities, ion migration is more detrimental for perovskite solar cells with n-type hole transport layers with much lower achievable efficiency limits (∼21%). The insights shared by this work could be of broad interest to critically evaluate the promises and prospects of n-type materials as hole transport layers for perovskite solar cells.
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