Abstract
With the rapid development of GaN light-emitting diodes (LEDs), LEDs have been utilized in various ways. However, the quality of the GaN epi-structure has been a popular topic. In order to achieve higher internal quantum efficiency (IQE), LEDs have to be made with few defects during the epitaxy growth. Here we propose an AlN nanorod template grown on the sapphire substrate by vapor-liquid-solid (VLS) method. The voids near the AlN nanorods indicate a modification of dislocation with a lateral overgrowth. A strain relaxation and a better IQE in the epi-layer are observed in the Raman spectroscopy and temperature-dependent photoluminescence (PL). As a result, the IQE of the device with the proposed AlN nanorod template is increased 12.2% as compared with the reference sample without AlN nanorods.
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