Abstract
In this paper, a gradient electron blocking layer (GEBL) is introduced to improve efficiency of deep‐ultraviolet light‐emitting diodes (DUV‐LEDs). Various structures of DUV‐LEDs are simulated to determine the energy band diagram variation and carrier injection mechanism resulting from the insertion of the GEBL. The simulation results show the improved electron and hole transport behavior in AlGaN multi quantum wells (MQWs). Especially, the injection efficiency of holes is improved with the increasing number of GEBL steps, which lead to the enhancement of internal quantum efficiency (IQE). The DUV‐LED structures with GEBL are grown in a high‐temperature metal‐organic chemical vapor deposition (HT‐MOCVD) system. Electroluminescence (EL) spectra show that the emission intensity at a wavelength of 280 nm from a DUV‐LED with a 12‐steps EBL is about 2.3 times that from a DUV‐LED with a single EBL.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
