Abstract
The development of a novel two-step annealing method has contributed to the significantly improved performance of the MAPbI3−xClx based perovskite solar cell (PSC). By utilizing a two-step annealing method, we obtained a high power conversion efficiency (PCE) of 12.72% with a current density (Jsc) of 18.35 mA cm−2, an open circuit voltage (Voc) of 0.90 V and a fill factor (FF) of 0.71. Noticeably, the two-step annealed device shows no hysteresis and exhibits a PCE which is approximately 1.2 times greater than that of the one-step annealed device. The improvement in device efficiency is ascribed to the reduced series resistance, increased parallel resistance, better surface coverage, lower leakage current and stronger crystallization of the MAPbI3−xClx perovskite layer.
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