Abstract
In this work, we present an alternative route to supply excessive selenium (Se) for the deposition of Sb2Se3 thin films by the co-evaporation of Se and Sb2Se3. Scanning electron microscopy (SEM) images showed that additional Se modified the growth process and surface morphology of Sb2Se3 thin films. X-ray diffraction (XRD) patterns confirmed that this co-evaporation process enhanced the beneficiary preferred orientations, and capacitance–voltage (C–V) measurement showed that the carrier concentration of the Sb2Se3 absorber increased with the additional evaporation of Se. Accordingly, the efficiency of the devices employing co-evaporated Sb2Se3 absorber layers increased significantly from 2.1 to 3.47% with a open-circuit voltage (VOC) of 364 mV, a short-circuit current density (JSC) of 23.14 mA/cm2, and a fill factor (FF) of 41.26%.
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