Abstract
In this work, a rapid and innovative strategy, intense pulsed light (IPL) sintering process was incorporated to enhance the as-formed devices efficiency. After the IPL sintering on the cathode side, the maximum current efficiency was enhanced from 43.9 to 50.5 cd/A. And the EQE showed a 2.7- and a 1.9-fold improvement at 100 cd/m2 and 1000 cd/m2, respectively. The improved performance of QLED with the IPL sistering benefited from the balance between electrons and holes from the existence of insulation AlOX at the Al/ZnMgO interface.
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