Abstract
Understanding the underlying physics of charge transport in organic semiconductors under illumination is important for the development of novel optoelectronic applications. We study the effects of monochromatic light in the visible spectrum on the channel of an organic thin-film transistor based on 2,8-difluoro-5,11-bis(triethylsilylethynyl) anthradithiophene. When the channel of the transistor was illuminated with red, green, or blue light, more charge carriers were measured than what exciton generation from photon absorption alone could provide, leading to a photon-to-charge-carrier conversion efficiency much larger than 100%. We explain this phenomenon using a model incorporating space-charge limited photocharges and enhanced hole injection from the source electrode due to lowering of the potential barrier by photogenerated electrons.
Highlights
N diF-TES ADT as a function of the number of photons absorbed by the semiconducting layer at three wavelengths in the visible spectrum: 473, 532, and 633 nm
Representative I–V transfer curves are shown in the supplementary material (Fig. S2) for the measurement in the dark and illumination at low, medium, and high incident laser power
By varying the incident laser power on the transistor at room temperature, we investigated the effects of the optical power on the photocurrent (DIds 1⁄4 Idks À Ids), which is the difference between the drain–source current in the dark (Ids) and under illumination (Idks) when the transistor was in the saturation regime (Vds 1⁄4 Vgs 1⁄4 À40 V)
Summary
N diF-TES ADT as a function of the number of photons absorbed by the semiconducting layer at three wavelengths in the visible spectrum: 473, 532, and 633 nm.
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