Abstract
A two-step process with post-annealing of stacked precursors has been widely used for Cu2ZnSn(S,Se)4 (CZTSSe) absorbers. However, no simple approach is currently available for simultaneously tuning the S/(S+Se) ratio and avoiding tin loss issue in CZTSSe films, which are critical factors to achieve high efficiency. In this work, we demonstrate by simply adding SnS powder during selenization, we can eliminate the tin loss and also control the S/(S+Se) ratio. Furthermore, we can suppress the formation of Mo(S,Se)2 during selenization. Based on thermodynamic calculations, we propose SnS powder reacts with selenium to form SnSe and releases sulfur vapor during selenization. The Sn-contained vapor avoids tin evaporation from CZTSSe. By varying the amount of SnS powder, the partial pressure ratio of sulfur to selenium can be tuned; therefore, the film composition and band bap of CZTSSe can be changed. The presence of sulfur partial pressure also dramatically decreases the formation of Mo(S,Se)2 during selenization. The efficiency is substantially boosted from 3.97% to 7.35% by adding SnS powder during selenization. Our approach realizes one-step sulfo-selenization, providing a general tuning knob for compositional control of CZTSSe absorbers, which shines light on various process developments of CZTSSe absorbers by post-annealing vacuum- or solution-fabricated precursors.
Published Version
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