Abstract

We discuss in general terms factors which determine the luminescence efficiency of activated wide band gap materials. These processes can be classified into two broad categories: the first, which has been thoroughly studied, entails interactions which lead to non-radiative dissipation of optical energy at the specific active center. The second set concerns interactions leading to the delocalization and the transport of optical energy away from the originally excited state. Recent spectroscopic results from these studies have allowed the absolute placement of the ground state of luminescent ion series within the band gap of the host crystal and have cast light on the systematics of such placement. These results are relevant to materials which evince the property of persistent phosphorescence. Developments in these materials as well as a number of new applications will be touched upon. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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