Abstract
The major effort during the past few years has been centred on reducing the cost of terrestrial solar cells. One of the most promising ways is to form semiconductor-insulator-semiconductor heterostructures with transparent conducting n-(indium tin oxide) as the top semiconductor and silicon as the base semiconductor. In this paper the process-dependent behaviour of such heterostructures is explained on the basis of surface states at the insulator-semiconductor interface and fixed charge in the insulating oxide layer. The calculated efficiencies of various heterostructure solar cells which have indium tin oxide as one of the constituents are also presented.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
