Abstract
This paper discusses the possibility of increasing the efficiency and reliability of radiation sources made from semiconductors with unipolar conductivity and operating in strong electric fields. To this end, the active region of the structure is fabricated in the form of alternating layers of different resistance, so that strong-field regions are spatially separated from luminescence-generation regions. The proposed idea is put into practice on M-i-n structures made from gallium nitride. The properties of fabricated LED structures are presented.
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