Abstract

This paper presents the investigation results of the efficiency of power electronic resonant zero-current switching dc–dc switched-capacitor voltage multipliers (SCVMs) in three topologies. The analytical model of efficiency shows the impact of the converters’ particular parameters on their properties and gives indications for an adequate design. The impact of the parameters of the semiconductor devices, parasitic resistances, switched capacitance value, number of switching cells, switching frequency, and choke design on the converters’ efficiency is demonstrated. The converters are investigated analytically with the use of computer-based simulations and experimentally as a three-cell MOSFET-based SCVM dc–dc resonant boost converter. The in-depth analysis and the results obtained are some novel contributions to the existing knowledge of switched-capacitor-based power electronic conversion. Moreover, the presented method of analysis can be useful for analyzing other types of SC power converters comprising resonant switching circuits.

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