Abstract
The effects of a ZnSe buffer layer on the optical properties of ZnTe on GaAs grown by molecular beam epitaxy (MBE) have been investigated by photoluminescence (PL) and Raman scattering (RS). An improvement of crystallinity of ZnTe films is recognized as the thickness of the ZnSe buffer layer is larger than 0.2 μm, in that the PL intensity ratio of the neutral acceptor-exciton complex ( I 1) to the deep level emission increases exponentially. Raman scattering results show an expansion of the ZnSe lattice due to accomodation of the ZnTe lattice. The experimental critical thickness of ZnTe/ZnSe is estimated to be 500 Å, which is quite large compared with the value expected.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
