Effects of zirconium on electrochemically synthesized tin selenide materials on fluorine doped tin oxide substrate for photovoltaic application

Abstract

The electrochemical approach was effectively used to create films of both undoped SnSe and Zr-doped SnSe nanocrystals. Using a multipurpose D8-AdvanceX-ray diffractometer, an EDX analysis, and a 756S UV-Visible spectrophotometer, the produced films were subjected to optical, structural, and composition characterization. The optical band gap energy for Zr-doped SnSe thin films ranges from 1.2 eV to 1.8 eV, while that for undoped SnSe thin films is determined to be 1.0 eV. For all samples, it was discovered that the absorbance values rose as the Zr dopant concentration rose. As the Zr-dopant concentration rises, the transmittance edge moves toward the lowest wavelength. The reflectance value rises as the concentration of Zr-dopant does. The nanocrystalline grains in the undoped SnSe were randomly distributed and clumped together in the SEM image.