Abstract
Effects of V/III ratio on heavily Si doped InGaAs and InP were studied using low pressure metalorganic chemical vapor deposition (LP-MOCVD) at a growth temperature of 550°C. In InGaAs, as the V/III ratio decreases from 256 to 64, the carrier concentration increases from 3.0×10 18 to 5.8×10 18 cm −3; and the lattice mismatch of InGaAs to InP was observed to vary from −5.70×10 −4 to 1.49×10 −3. In InP, when the V/III ratio decreases from 230 to 92, the same trend as that in Si doped InGaAs was observed that the carrier concentration increases from 9.2×10 18 to 1.3×10 19 cm −3. The change of AsH 3 was found to have stronger effect on Si incorporation in InGaAs at lower growth temperature than at higher growth temperature.
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