Abstract
Very high quality Ga0.47In0.53 As-InP heterojunctions, quantum wells and superlattices have been grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD). Excitation spectroscopy shows evidence of strong and well resolved exciton peaks in the luminescence and excitation spectra of GalnAs-InP quantum wells. Optical absorption shows roomtemperature exciton in GalnAs-InP superlattices (M. Razeghi et al., 1983)1. Quantum wells as thin as 8 A with a photoluminescence linewidth of 9 meV have been grown.KeywordsQuantum Hall EffectNegative Differential ResistancePhotoluminescence Excitation SpectrumMOCVD ReactorCyclotron Resonance LineThese keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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