Abstract
Effects of variational parameters on different dielectric functions in the study of semiconductor–metal transition are investigated for a shallow donor in an isolated well of GaAs/Ga 1-x Al s As superlattice system within the effective mass approximation. Vanishing of the donor ionization energy as a function of well width and donor concentration suggests that no transition is possible below a well width of 30 Å supporting the scaling theory of localization. The effects of Anderson localization, exchange and correlation in the Hubbard model are included in a simple way. The relationship between the present model and the Mott criterion in terms of Hubbard model is also brought out. The critical concentration is enhanced when the Hartree–Fock dielectric function is used. Results are compared with the existing data available and discussed in the light of existing literature.
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