Effects of vacancies near substitutional implants on trapping and desorption of helium — a simulation

Abstract

Trapping of He by vacancies and drainage of He from substitutional implants (Ag and Kr in W) to nearby vacancies are investigated using static lattice calculations. The calculations indicate that drainage of He will occur to vacancies within a radius of 2.5 lattice units from the implant. Furthermore the trapping probability of substitutional and interstitial random walkers on a bcc lattice by substitutional traps or vacancies is calculated. When implantation-produced vacancies are present in the vicinity of the observed trap a shielding effect occurs. Trapping constants are calculated with two random walk models for both the unshielded and the shielded defect. For the latter several configurations were taken. The results show that shielding of a defect by one vacancy at a distance of three lattice units leads already to a reduction of He trapping by that defect of 30% to 40%.