Abstract
Top-contact Pentacene-based organic thin film transistors (OTFTs) with a thin layer of Vanadium Pent-oxide between Pentacene and Au layer are fabricated. Here we have found that the devices with V2O5/Au bi-layer source–drain electrode exhibit better field-effect mobility, high on–off ratio, low threshold voltage and low sub-threshold slope than the devices with Au only. The field-effect mobility, current on–off ratio, threshold voltage and sub-threshold slope of V2O5/Au bi-layer OTFT estimated from the device with 15 nm thick V2O5 layer is .77 cm2 v−1 s−1, 7.5×105, −2.9 V and .36 V/decade respectively.
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