Abstract
The effects of <001> uniaxial stresses on the photoluminescence spectrum of Ge doped with the double acceptor Zn are found to be considerably different from those previously reported for Ge: Be. The Ge: Zn results are, however, in complete agreement with the predictions of our model for the Ge: Zn spectrum, in which one of the most prominent lines is considered to result from the accidental superposition of a bound exciton and a bound multiexciton complex transition. As in the case of Ge: Be, sufficiently large stresses result in the disappearance of all luminescence associated with the double acceptor impurities, a result expected from a shell model analysis of these excitonic systems.
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