Abstract
Increasing uniaxial stress applied to Ge doped with the double acceptor Be results in the disappearance of first the luminescence due to two-exciton complexes bound to Be, and at a higher stress the Be bound exciton itself, with a concomitant increase in free exciton intensity by a factor of 25. These results can be readily understood in terms of the shell model of excitonic complexes. Similar lines observed in Zn-doped Ge behave in a qualitatively different way under uniaxial stress, indicating that the existing model for the origin of the Zn lines must be modified.
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