Abstract
The resistance of an Al/CuxO/Cu structure can reversibly switch between the high resistance state (HRS) and the low resistance state (LRS) with dc voltage application. The use of the conducting filament model was suggested to explain this behavior. The resistive switching from the HRS to the LRS can be induced by dc voltage application, ultraviolet (UV) illumination, or thermal heating. Therefore, the formation of conducting filaments was relative to power and unnecessary with the electric field. Effects of UV illumination and voltage stress on the resistive switching were also investigated to analyze the role of the electrostatic force. The resistive switching from the HRS to the LRS induced by dc voltage application should be dominated by thermochemical reaction and was partially helped by the electrostatic force.
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