Abstract
In this study, the capacitance-voltage (C-V) and current-voltage (I-V) characteristics of 4H-SiC Schottky barrier diode (SBD) irradiated by swift heavy ions (SHI) are studied under different ultraviolet (UV) conditions. The effective carrier concentration (ND), reverse current (IR), series resistance (RS), ideal factor (n) and Schottky barrier height (SBH) are calculated and analyzed. Furthermore, by analyzing the parameters, especially, ND, IR and n, a physical model is built. The UV illumination dependence of the recombination center states for defects or defect-states is presented.
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