Abstract
The function of a commercial Schottky Barrier Diode (SBD) based on 4H-SiC in an environment of extreme temperature and radiation was assessed. The capacitance-voltage (C-V) and current-voltage (I-V) characteristics of the devices were measured by heavy ions (HIs) irradiation at 3 different fluences and 15 different nodes of temperature. From these measurements, the effective carrier concentration (ND), reverse current (IR), series resistance (RS), ideal factor (n), and Schottky barrier height (SBH) were calculated and analyzed. Obvious increases of ND and IR were found and some changes of the electronic characteristics with temperature were enhanced by HIs. After the highest fluence of irradiation, the IR at low temperature (20 K) was even larger than the IR at room temperature, which was subjected to lower fluence of irradiation, suggesting risks for aerospace applications. These changes were attributed to defects both at the interface and in the body-substrate induced by irradiation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
