Abstract
The effects of tungsten doping on the sintering, microstructure, dielectric properties, and ferroelectric properties of SrBi 2 (Ta 1 m x W x )O 9 + y ceramics were investigated. The densification and grain-growth processes of the tungsten-doped ceramics were shifted to a lower temperature range. For the ceramics with relative density S 90%, the dielectric constant is 120-125 and 80-170 for the undoped and doped ceramics, respectively, and the dielectric loss tangent is below 2%. As compared with the undoped ceramics, the ferroelectric properties can be significantly improved by doping with an appropriate amount of tungsten ( x = 0.05-0.1) and sintering at 1000-1200°C. The variations of dielectric and ferroelectric properties are influenced by the incorporation of tungsten into crystal lattice and several microstructural factors.
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