Effects of Tri-Layer Polymer Dielectrics on Electrical Characteristics in Pentacene Thin Film Transistors

Abstract

The tri-layer polymer dielectrics were applied to reduce leakage significantly resulting in improved device mobility and stability. The lower and more stable leakage current can be ascribed to smoother and pinhole-free surface as Scanning electron microscope (SEM) shown. With the appropriate arrangement of three dielectric layers, mobility of pentacene thin film transistors (OTFTs) could be enhanced by a factor of 1.7, while non-cross-linked poly-4-vinylphenol (NCPVP) instead of cross-link PVP (CPVP), was chosen as top layer for surface energy closer to pentacene film.