Abstract
In this paper, we report on the effects of trap energy levels on the reverse recovery surge, for the first time. The different current and temperature dependences of the reverse recovery surge with shallow and deep trap energy levels were measured. Results of simulations of current and temperature dependences of the reverse recovery surge with different trap energy levels were similar to measurement results. Through numerical and theoretical analyses based on the Shockley–Read–Hall (SRH) model, it was confirmed that variations in recombination rate due to different trap energy levels affect the current and temperature dependences of the reverse recovery surge. We found that in order to achieve a soft recovery in the design of silicon power diodes, the trap energy levels play a crucial role along with the carrier lifetime profile.
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