Effects of transition metal (Cu, Zn, Mn) doped on leakage current and ferroelectric properties of BiFeO3 thin films

Abstract

BiFeO3 (BFO) and transition metal (Cu, Zn, Mn) doped BFO thin films were successfully fabricated on indium tin oxide (ITO)/glass substrate using sol–gel process, spin coating and layer by layer technique. Compared to the pure BFO thin film, improved ferroelectric and leakage current properties were observed in the transition metal doped BFO thin films. The transition metal (Cu, Zn, Mn) doped BFO thin films have varying degrees of lower leakage current compared with the pure BFO film. The substitution of Cu and Zn increase the remnant polarization of BFO thin films. The values of remnant polarization (2Pr) were 120.6 and 126.7 μC/cm2 at 933 kV/cm for Cu-doped and Zn-doped BFO thin film, respectively.