Abstract
InAs quantum dots (QDs) grown on InP substrates have potential applications in laser diodes for optical fiber communication as well as for the long wavelength region from 1.6 to 1.9 μm. Self-assembled InAs QDs on InP substrates have been grown by metalorganic chemical vapor deposition (MOCVD), chemical beam epitaxy, and molecular beam epitaxy. This chapter presents a method to extend the optical emission range of the InAs/(InGaAs)/InP QDs by placing an additional thin GaAs layer between the InAs QDs and the capping layers such as InGaAs and InP. Possible factors affecting the blueshift of the PL peak are changes in energy barrier height, stress, and strain-induced interdiffusion during the capping layer growth.
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