Abstract
(Pb0.97La0.02)(Zr0.9Sn0.05Ti0.05)O3 (PLZST) antiferroelectric films were deposited on LaNiO3/Si substrates by a sol–gel method. The XRD results show that the PLZST films are restrained by the LaNiO3 films and coexisted ferroelectric phases are induced by the internal compressive stress. As the PLZST film thickness increases, the remnant polarization and dielectric constant decrease while the energy storage density increases. It could be explained by the increasing antiferroelectric phase in the PLZST film with large thickness. Therefore, the energy storage property can be improved by increasing the PLZST film thickness.
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