Abstract
To achieve increased device performance, the authors systematically explored the dependence of the optical characteristics of InAs quantum dot (QD) ensembles grown via molecular beam epitaxy with different V/III ratios and thicknesses of the low temperature GaAs capping layers. In addition, the paper discusses the mechanism behind the dependence. Experiments showed the QD optical properties were significantly dependent on the GaAs capping layer V/III ratio and the initial GaAs capping layer thickness. An optimized V/III ratio and GaAs capping thickness is reported.
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