Abstract
This work experimentally and theoretically investigates the effects of thermally-activated diffusion on the depth profiles of nickel atoms in copper. Nickel ions of 72keV and 5×1015ions/cm2 were implanted into copper targets at elevated temperatures of 200, 400 and 500°C, respectively. The experimental nickel depth profiles were obtained by the secondary ion mass spectrometry (SIMS). The calculated profiles were obtained using a thermally-activated diffusion model in which both the radiation-enhanced diffusion (RED) and radiation-induced segregation (RIS) are considered. Furthermore, lattice dilation and preferential sputtering were taken into account by means of an appropriate coordinate transformation. The results indicated a strong temperature-dependence of nickel depth profiles. In addition, the nickel depth profiles tend to broaden and surface concentration increase with temperatures.
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Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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