Abstract
The effects of thermal nitrided gate-oxide thickness on n-type 4H silicon-carbide-based metal-oxide-semiconductor characteristics have been reported. Seven different thicknesses of oxide (tox), ranging from 2to20nm, have been investigated. It has been shown that effective oxide charge (Qeff) and total interface-trap density (Nit) have demonstrated a cyclic trend as tox is increased. These observations have been explained in the letter. Correlations of Qeff and Nit with oxide breakdown field and current transport mechanism in these oxides have also been established and explained.
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