Abstract
Effects of thermal expansion coefficient (CTE) mismatch on structure and electrical properties of TiO 2 film deposited on Si substrate by ion beam assistant electron beam evaporation have been investigated. Because of a high CTE mismatch between TiO 2 film and Si substrate, microcracks appeared in the TiO 2 film deposited directly on Si substrate after the as-deposited film was annealed at 600°C. In order to decrease the CTE mismatch, TiO 2 film was deposited on Si substrate which was covered by a ZrO 2 thin layer. As a result, crack–free TiO 2 film after annealed at the same temperature was obtained. Meanwhile, corresponding to the crack–free structure, the TiO 2 thin film has more stable dielectric properties and excellent I–V characteristics.
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