Abstract
Thermal cycling through the temperature of the metal-semiconductor transition (T tr = 341 K) was found to have an adverse effect on the electrical behavior of a VO2-based ceramic (80 wt % VO2 + 20 wt % glass; glass composition, 80 wt % V2O5 + 20 wt % P2O5). The observed increase in resistivity and reduction in resistivity jump at Ttr are attributable to the formation of microcracks in VO2 crystallites. Heat treatment at 1170 K in an inert atmosphere eliminates the irreversible changes produced by thermal cycling, presumably owing to microcrack healing through growth of VO2 crystallites from the vanadium phosphate melt filling the microcracks
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