Abstract
Photoluminescence (PL) measurements on epitaxial films grown on Si substrates by using molecular beam epitaxy were carried out at various substrate tilt angles to investigate the effect of annealing on the optical and the structural properties of CdTe epilayers. The strains for the as-grown and the annealed CdTe epitaxial layers on Si substrates as functions of the substrate tilt angle were obtained from the acceptor bound-exciton peak of the PL spectra. Possible primitive unit cells of the as-grown and the annealed CdTe epilayers are presented.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
