Abstract
In this study, Al-doped ZnO (AZO) and films were deposited on p-type GaN films followed by thermal annealing to form ohmic contacts. After thermal annealing, the resistivities of AZO films reduced from to . Both as-deposited AZO and contacts on p-GaN displayed a non-ohmic characteristic. Only the 800°C-annealed contacts exhibited a linear current–voltage characteristic, showing a specific contact resistance of around . After undergoing the annealing in nitrogen ambience, the light transmittance of the films increased from 70% to higher than 90% in the visible range. These results revealed that the contact can serve as a suitable transparent current spreading layer for the fabrication of GaN-based light-emitting devices.
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