Abstract

The SiO2 films were deposited on sapphire substrates using radio frequency (RF) magnetron sputtering to enhance the mid-wave infrared (IR) transmittance. The effects of thermal treatments by annealing and in-situ heating on the SiO2 films were investigated. After annealing at 600 °C, the surface morphology, microstructure, chemical states, and optical constants were investigated. No obvious microcracks or delamination were observed on the film surfaces, indicating excellent adhesion to the sapphire substrates. With an increase in the annealing time, gradual oxidation of Si atoms within the SiO2 thin films occurred, resulting in the release of OH groups and evaporation of moisture. The refractive index exhibited slight changes, while the extinction coefficient showed a significant reduction, thus the transmittance was improved. According to the in-situ heating tests from the annealed samples, it revealed a slight increase in average transmittance with prolonged annealing time. Finally, we assessed the performance of the annealed samples by rapid heat shock to 600 °C at a very short time, which demonstrated outstanding optical performance and heat-resistant properties. The present work supports the feasibility of applying the SiO2 films under harsh high-temperature environments.

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