Effects of the Ta content on the microstructure and electrical property of reactively sputtered Ta xZr 1−xN thin films

Abstract

The Ta xZr 1−xN films were prepared by reactive magnetron sputtering and the concentration of zirconium and tantalum was regulated by controlling the power to the sputtering guns. The effects of the Ta content on the microstructure, composition and electrical properties of Ta xZr 1−xN films were investigated by x-ray diffraction, field-emission electron probe micro-analyzer, atomic force microscopy, x-ray photoelectron spectroscopy, four point probe and Hall-effect measurements. Results indicated that the Ta xZr 1−xN films with different Ta contents were crystallized in NaCl-type structure. However, the lattice constant of Ta xZr 1−xN films decreased with the increase of the Ta content due to the smaller ionic radius of Ta 5+ comparing with that of Zr 4+. The decreasing lattice constant of Ta xZr 1−xN films with the Ta content evidenced the successful substitution of Zr with Ta. The electrical resistivity of Ta xZr 1−xN films showed a minimum value of 78 μΩ cm at Ta content of 3.5 at.% and then increased with the increase of Ta content. Hall measurements indicated that the electrical conduction of films was essentially due to electrons (n-type). And the increase of carrier density and mobility at a Ta content of 3.5 at.%, caused by the extra d valence electron of Ta and the less electron scattering of grain boundaries, was responsible for the further decreasing of resistivity from pure ZrN x films.