Abstract
The effects of the partial pressure of precursor on the metalorganic chemical vapor deposition of copper were investigated. Copper was deposited using copper (I) hexafluoroacetylacetonate trimethylvinylsilane as a metalorganic precursor on TiN/Ti/Si substrates in a low-pressure warm-wall chemical vapor deposition reactor. The deposition rate of copper film was a constant value at a partial pressure higher than 0.048 Torr and decreased to below the constant value at a partial pressure lower than 0.048 Torr. The incubation time for copper nucleation decreased with increasing partial pressure of the precursor. The resistivity of copper film decreased to 2.00 µ Ω· cm with increasing partial pressure of the precursor. At a partial pressure lower than 0.048 Torr, copper did not nucleate inside the trench so that the step coverage of copper film became very poor.
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