Abstract
The effects of the microstructure of a platinum bottom electrode on the oxidation behavior of a TiN diffusion barrier layer were investigated. The microstructures of the bottom Pt electrodes were varied from a columnar structure to a granular one by adding oxygen to the sputtering gas during the sputter-deposition and subsequent vacuum annealing process. It was found that a Pt film with a granular microstructure significantly retarded the oxidation of the underlying TiN barrier layer during annealing at 650°C for 30 min in air. However, the Pt film with a conventional columnar microstructure was unable protect the TiN layer from oxidation at temperatures as low as 450°C. The improved oxidation resistance of the barrier layer, as a result of modifying the microstructure of Pt films, is expected to contribute to the implementation of high-dielectric and ferroelectric capacitors into high-density memory devices.
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