Abstract
The role of the inversion-layer centroid in a double-gate metal-oxide-semiconductor field-effect-transistor (DGMOSFET) has been investigated. The expression obtained for the inversion charge is similar to that found in conventional MOSFETs, with the inversion-charge centroid playing an identical role. The quantitative value of this magnitude has been analyzed in volume-inversion transistors and compared with the value obtained in conventional MOSFETs. The minority-carrier distribution has been found to be even closer to the interfaces in volume-inversion transistors with very thin films, and therefore, some of the advantages assumed for these devices are ungrounded. Finally, the overall advantages and disadvantages of double-gate MOSFET's over their conventional counterparts are discussed.
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