Abstract
Different growth behaviour of the CuxS layer was obtained experimentally when the CuxS layer was grown chemically on the basal plane of the CdS. The growth process of the layer is discussed by assuming the different diffusion velocities of Cd element in the CuxS and Cu2S. The electric properties of the non-heat treated single crystal Cu2S–CdS heterojunction diode are also discussec with respect to the variation of the constituent elements in the transition region of the heterojunction diode.
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