Abstract
In this report, III-nitride/air deeply etched one-dimensional (1D) distributed Bragg reflector (DBR) stacks and two-dimensional (2D) photonic octagonal quasi-crystals (8PQCs) were formed on the GaN-based light emitters by focused Ga ion beam (FIB) milling. The effects of these 1D and 2D GaN/air periodic nanostructures on the properties of the GaN-based light emitters were studied by the measurements of microscopic optical reflection, flourescence, electrical luminescence and current-voltage characteristics. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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